FGH75T65SHDTL4 Datasheet, IGBT, ON Semiconductor

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FGH75T65SHDTL4 Features and benefits

* Maximum Junction Temperature: TJ =175°C
* Positive Temperature Co−efficient for Easy Parallel Operating
* High Current Capability
* Low Saturation Volta.

FGH75T65SHDTL4 Application

where low conduction and switching losses are essential. Features
* Maximum Junction Temperature: TJ =175°C
* Po.

FGH75T65SHDTL4 Description

Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are es.

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